Recent Graphene News
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By fabricating graphene structures atop nanometer-scale “steps” etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.
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Georgia Tech scientists have for the first time provided details of their "confinement controlled sublimation" technique for growing high-quality layers of epitaxial graphene on silicon carbide wafers.
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In a new study, researchers at the Georgia Institute of Technology and the National Institute of Standards and Technology (NIST) have described a family of seven potential defect structures that may appear in sheets of graphene.
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Professor Walter de Heer has been honored as the 1st Utz-Hellmuth Felcht Award winner at the International Carbon Conference in Shanghai where he was recognized for his invention of graphene based electronics and for his merits in the area of graphene research and his revolutionary concept of graphene based nanoelectronics.
Click on the graphic to hear the musical version of Graphene conceived and recorded for Inside the Black Box
Professor Walter de Heer has been awarded the 2012 Jesse W. Beams Research Award by the Southeastern Section of the American Physical Society.
The Beams Award honors those whose research led to the discovery of new phenomena or states of matter, provided fundamental insights in physics, or involved the development of experimental or theoretical techniques that enabled others to make key advances in physics with critical acclaim of peers nationally and internationally.
The Georgia Tech Materials Science and Engineering Center
(MRSEC), funded by the National Science Foundation (NSF), is located in
the Georgia Tech Marcus Nanotechnology Building. The initial focus of
the center is research and development on epitaxial graphene (EG), a
material with extraordinary electronic properties that offers the
possibility of greatly enhanced speed and performance relative to
silicon; this material may serve as the successor to silicon in
integrated circuits and microelectronic devices. Georgia Tech Physics
Professors Walt de Heer, Ed Conrad, and Phil First are world leaders in
the growth and characterization of EG.
The Georgia Tech MRSEC will develop the fundamental science and technology to maximize graphene’s potential for future electronics technology, will establish core curricula in Epitaxial Graphene (EG), and will educate and train a diverse workforce for future academic and industrial leadership in microelectronics. The MRSEC EG effort is cross-disciplinary within Georgia Tech and within three other U.S. universities: University of California-Berkeley, University of California-Riverside, and University of Michigan. Professor Dennis Hess (ChBE) serves as the Georgia Tech MRSEC Director, and Professor Walt de Heer (Physics) heads the EG Interdisciplinary Research Group.
Fabrication on Patterned Silicon Carbide Produces Bandgap for Graphene-Based Electronics
Controlling Silicon Evaporation Improves Quality of Graphene
Flower-Like Defects May Help Graphene Respond to Stress
