Georgia Institute of Technology

Fabrication on Patterned Silicon Carbide Produces Bandgap for Graphene-Based Electronics

By fabricating graphene structures atop nanometer-scale “steps” etched into silicon carbide, researchers have for the first time created a substantial electronic bandgap in the material suitable for room-temperature electronics. Use of nanoscale topography to control the properties of graphene could facilitate fabrication of transistors and other devices, potentially opening the door for developing all-carbon integrated circuits.

Controlling Silicon Evaporation Improves Quality of Graphene

Georgia Tech scientists have for the first time provided details of their "confinement controlled sublimation" technique for growing high-quality layers of epitaxial graphene on silicon carbide wafers.

Flower-Like Defects May Help Graphene Respond to Stress

In a new study, researchers at the Georgia Institute of Technology and the National Institute of Standards and Technology (NIST) have described a family of seven potential defect structures that may appear in sheets of graphene.

Technique Produces Graphene Nanoribbons with Metallic Properties

A new "templated growth" technique for fabricating nanoribbons of epitaxial graphene has produced structures just 15 to 40 nanometers wide that conduct current with almost no resistance. These structures could address the challenge of connecting graphene devices.

Expitaxial Graphene Shows Promise for Replacing Silicon in Electronics

Georgia Tech has become a leader in developing epitaxial graphene, a material that can be grown on large wafers and patterned for use in electronics manufacturing. In a recent paper, Georgia Tech researchers reported fabricating an array of 10,000 top-gated transistors on a 0.24 square centimeter chip.

Epitaxial Graphene: Designing a New Electronic Material

Epitaxial Graphene: Designing a New Electronic Material — Thu, 12/16/2010 - 01:00

Georgia Tech’s Walt de Heer Awarded Materials Research Society Medal

Walt de Heer awarded Materials Research Society Medal for “pioneering contributions to the science and technology of epitaxial graphene.”

Researchers Develop Techniques for Using Material Recognized in Nobel Prize

Georgia Institute of Technology researchers have pioneered the fabrication techniques expected to be used for manufacturing high-performance electronic devices from the material that has been recognized in this year's Nobel Prize in physics.

New Graphene Fabrication Method Uses Silicon Carbide Template

Georgia Tech researchers have developed a new "templated growth" technique for fabricating nanometer-scale graphene devices. The method addresses what had been a significant obstacle to the use of this promising material in future generations of high-performance electronic devices.

Instrument Reveals Quartet of Graphene Electron States

Using a one-of-a-kind instrument designed and built at the National Institute of Standards and Technology (NIST), researchers have "unveiled" a quartet of graphene's electron states and discovered that electrons in graphene can split up into an unexpected and tantalizing set of energy levels when exposed to extremely low temperatures and extremely high magnetic fields.

Study of Electron Orbits in Multilayer Graphene Finds Energy Gaps

Researchers have taken one more step toward understanding the unique and often unexpected properties of graphene, a two-dimensional carbon material that has attracted interest because of its potential applications in future generations of electronic devices.

Seeing Moire in Graphene

Researchers at the Georgia Institute of Technology and the National Institute of Standards and Technology have demonstrated that atomic scale moiré patterns, an interference pattern that appears when two or more grids are overlaid slightly askew, can be used to measure how sheets of graphene are stacked and reveal areas of strain.

Templates let graphene grow

While successful fabrication of high-quality transistors demonstrates graphene's viability as an electronic material, Walt de Heer sees them as only the first step in what could be done with the material. Pictured above is a graphene transistor.

Scientists Gather for Symposium on Epitaxial Graphene

Scientists from around the world will gather next week to discuss the latest research findings at the second International Symposium on the Science and Technology of Epitaxial Graphene. The conference is sponsored by the Materials Research Science and Engineering Center at the Georgia Institute of Technology. It will take place September 14-17, 2010, at the Hampton Inn & Suites Amelia Island Historic Harbor Front Hotel in Amelia Island, Florida.